AOSP32314 - Alpha & Omega Semiconductors

AOSP32314 30V N-Channel MOSFET

• Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 14.5A < 9mΩ < 12.6mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Botto.

Features

Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: July 2017 www.aosmd.com Page 1 of 5 AOSP32314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS=±20V Gate Thresh.