• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -5A < 42mΩ < 64mΩ HBM Class.
imum -30 ±20 -5 -3.9 -20 13 8 1.7 1.1 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.0: May 2019 www.aosmd.com Page 1 of 5 AOSD21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOSD21313C |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
2 | AOSD21307 |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
3 | AOSD26313C |
Alpha & Omega Semiconductors |
30V Complementary MOSFET | |
4 | AOSD32334C |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET | |
5 | AOSD62666E |
Alpha & Omega Semiconductors |
60V Dual N-Channel MOSFET | |
6 | AOS3729A-T42-NXC |
SANICO |
Analog MEMS Microphone | |
7 | AOSP21307 |
Alpha & Omega Semiconductors |
P-Channel MOSFET | |
8 | AOSP21311C |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
9 | AOSP21313C |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
10 | AOSP21321 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
11 | AOSP21357 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
12 | AOSP32314 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |