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FDY3000NZ |
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| Part Number | FDY3000NZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V... |
| Features |
• 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage – Continuous – Pulsed Power Dissipation (Steady State) Drain Current (Note 1a) Ratings 20 ± 12 600 1000 625 446 –55 to +150 Units V V mA mW °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA ... |
| Document |
 FDY3000NZ Data Sheet
PDF 144.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY3001NZ |
Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET |
|
| 2 | FDY300NZ |
Fairchild Semiconductor |
Single N-Channel Specified PowerTrench MOSFET |
|
| 3 | FDY301NZ |
Fairchild Semiconductor |
Single N-Channel MOSFET |
|
| 4 | FDY302NZ |
Fairchild Semiconductor |
Single N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 5 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET |
|