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FDY2001PZ |
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| Part Number | FDY2001PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – ... |
| Features |
• – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratings – 20 ±8 – 150 – 1000 625 446 –55 to +150 Units V V mA mW °C (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Cha... |
| Document |
 FDY2001PZ Data Sheet
PDF 231.86KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET |
|
| 2 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 4 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET |
|
| 5 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET |
|