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FDY102PZ |
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| Part Number | FDY102PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID =... |
| Features |
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A HBM ESD protection level = 1400 V (Note 3) RoHS Compliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V. Application Li-Ion Battery Pack S G D SC89-3 G1 S2 3D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter D... |
| Document |
 FDY102PZ Data Sheet
PDF 231.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY1002PZ |
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| 2 | FDY1002PZ |
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| 3 | FDY100PZ |
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| 4 | FDY101PZ |
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| 5 | FDY2000PZ |
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