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FDY101PZ |
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| Part Number | FDY101PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. IGN Applications ES • Li-Ion Battery Pac... |
| Features |
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. IGN Applications ES • Li-Ion Battery Pack • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant UER NDEW D 1S O i G 1 INED F nsemTION G NOMTMETNYDOUINRFoORMA D S2 COT RECNTAC FOR Absolute Maximum Ratings TA=25oC unless otherwise noted NO CO IVE Symbol Parameter ISIS E T VDSS S TA VGSS D ICE EA N ID DEV PL RESE PD Drain-Source Voltage Gate-Source Voltage Drain Curr... |
| Document |
 FDY101PZ Data Sheet
PDF 665.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDY100PZ |
Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET |
|
| 4 | FDY102PZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET |
|