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FDY100PZ |
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| Part Number | FDY100PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS ... |
| Features |
• – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted G 1 3 D S 2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) 1a) Ratings – 20 ±8 – 350 – 1000 625 446 –55 to +150 Unit s V V mA mW °C Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJ... |
| Document |
 FDY100PZ Data Sheet
PDF 202.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDY1002PZ |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDY1002PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDY101PZ |
Fairchild Semiconductor |
Single P-Channel MOSFET |
|
| 4 | FDY102PZ |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDY2000PZ |
Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET |
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