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CPH6314 - Sanyo Semicon Device

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CPH6314 P-Channel Silicon MOSFET

Ordering number : ENN8236 CPH6314 CPH6314 Features • Low ON-resistance. • High-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation.

Features


• Low ON-resistance.
• High-speed switching.
• 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings --30 ±20 --4 --16 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source B.

The same part from a different manufacturer

Datasheet CPH6314 - ON Semiconductor CPH6314

CPH6314 Ordering number : ENN8236 CPH6314 Features • Low ON-resistance. • High-speed switching. • 4V drive. P-Channel.

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