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Ordering number : ENN7017 CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6315] 6 5 4 0.6 0.2 Low ON-resistance. High-speed switching. 2.5V drive. 2.9 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings a t Ta=25 °C Parameter Drain-to-Source Voltage Gate.
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Package Dimensions
unit : mm 2151A
[CPH6315]
6 5 4
0.6 0.2
Low ON-resistance. High-speed switching. 2.5V drive.
2.9
0.15
0.05
1.6 2.8
1
2
0.4
Specifications
Absolute Maximum Ratings a t Ta=25 °C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings -.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 3 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 4 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 5 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 6 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 7 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 8 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 9 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 10 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|