Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 4V drive. Package Dimensions unit : mm 2151A [CPH6316] 2.9 0.15 6 54 0.05 0.2 0.6 1.6 0.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain .
• Low ON-resistance.
• High-speed switching.
• 4V drive.
Package Dimensions
unit : mm 2151A
[CPH6316] 2.9 0.15
6 54
0.05
0.2
0.6 1.6 0.6 2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3 0.95
0.4
0.7 0.2 0.9
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain
SANYO : CPH6
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm)
Ratings --30 ±20 -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
3 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
4 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
5 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET | |
6 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
7 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
8 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |