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Ordering number:EN5939 P-Channel MOS Silicon FET CPH6302 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151 [CPH6302] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Specifications Absolute.
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm 2151
[CPH6302]
6 5 4
0.6
0 to 0.1
0.6
1.6
2.8
1
2
3 0.95
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1%
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0.4
Conditions
0.7 0.9
0.2
Ratings
–30 ±20
–3
–12 1.6 150
–55 to +1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 3 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 4 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 5 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 6 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 7 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 8 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 9 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 10 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|