CPH6311 - Sanyo Semicon Device

CPH6311 Ultrahigh-Speed Switching Applications

Ordering number : ENN6794 CPH6311 P-Channel Silicon MOSFET CPH6311 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6311] 0.15 Low ON-state resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 0.6 0.05 1.6 2.8 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sourc.

Features

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• Package Dimensions unit : mm 2151A [CPH6311] 0.15 Low ON-state resistance. Ultrahigh-speed switching. 2.5V drive. 6 5 4 0.6 0.05 1.6 2.8 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 0.7 0.9 0.2 3 0.95 0.6 Ratings -20 ± 10 --5 -20 1.6 2.0 150 --55 to +150 0.2 2.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SAN.