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www.DataSheet4U.com Ordering number : ENN8208 CPH6320 P-Channel Silicon MOSFET CPH6320 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse.
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General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --12 ±8 --3.5 --14 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|
| 2 | CPH6328 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|
| 3 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 4 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 5 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 6 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 7 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 8 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 9 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 10 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 11 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 12 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|