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CPH6314 |
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| Part Number | CPH6314 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENN8236 CPH6314 CPH6314 Features • Low ON-resistance. • High-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Ab... |
| Features |
• Low ON-resistance. • High-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings --30 ±20 --4 --16 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source B... |
| Document |
 CPH6314 Data Sheet
PDF 36.46KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 3 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 4 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 5 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|