Ordering number:ENN5810 PNP/NPN Epitaxial Planar Silicon Transistors CPH6102/CPH6202 High-Current Switching Applications Applications · DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2146A [CPH6102/6202] 2.9 6 5 4 0.6 Features · Adoption of FBET, MBIT processes. · High current capacitance. · Low collector.
· Adoption of FBET, MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package permitting applied sets to be made small and slim (0.9mm).
· High allowable power dissipation.
0.05
1.6 2.8
1
2
( ) : CPH6102
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Mounted on a cerami.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
5 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
6 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
7 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET | |
8 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
9 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
10 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |