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www.DataSheet4U.com Ordering number : ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6318] 6 5 4 0.6 0.05 Low ON-resistance. High-speed switching. 1.8V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source.
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•
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Package Dimensions
unit : mm 2151A
[CPH6318]
6 5 4
0.6
0.05
Low ON-resistance. High-speed switching. 1.8V drive.
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW≤5s Conditions
0.4
0.7 0.9
0.2
3 0.95
0.6
1.6
2.8
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 3 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 4 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 5 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 6 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 7 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 8 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 9 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 10 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|