Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151A [CPH6306] 0.2 0.05 2.9 6 5 4 0.15 0.6 1 2 3 0.95 0.6 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage.
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm 2151A
[CPH6306]
0.2
0.05 2.9 6 5 4 0.15
0.6
1 2 3 0.95
0.6
1.6
2.8
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm)
www.DataSheet4U.com
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Conditions
0.7 0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 2 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 3 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |
|
| 4 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 5 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 6 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 7 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET |
|
| 8 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 9 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 10 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |
|