Ordering number : ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6312] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. High-speed switching. 4V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate.
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Package Dimensions
unit : mm 2151A
[CPH6312]
6 5 4
0.6 0.05 1.6 2.8 0.2 2.9 0.15
Low ON-resistance. High-speed switching. 4V drive.
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2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.4
0.7 0.9
0.2
3 0.95
0.6
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings -30 ± 20 -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
3 | CPH6314 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
4 | CPH6314 |
ON Semiconductor |
P-Channel Silicon MOSFET | |
5 | CPH6315 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
6 | CPH6316 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
7 | CPH6318 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
8 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH6320 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
12 | CPH6324 |
Sanyo Semicon Device |
ULTRAHIGH-SPEED SWITCHING APPLICATIONS |