| No. | Partie # | Fabricant | Description | Fiche Technique |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.--. :~~g\::~;\~ |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.--. :~~g\::~;\~ |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 150 ns typical • Polysilicon MOS gate - Voltage controlled turn onloff • High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMET |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.3V typ @ 20A • Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) max |
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Siemens Semiconductor Group |
Ge-Avalanche Photodiode with Pigtail / Central Pin with each component. Symbol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00534X SRD 00535X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 150 ns typical • Polysilicon MOS gate - Voltage controlled turn onloff • High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMET |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMET |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMET |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (M |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (M |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5Vtyp@20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIME |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.5Vtyp@20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIME |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2.3V typ @ 20A • Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) max |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2..5V typ @ 20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r |
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GE |
Insulated Gate Bipolar Transistor • Low VCE(SAT) - 2..5V typ @ 20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r |
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Siemens Semiconductor Group |
Ge-Avalanche Photodiode with Pigtail bol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00514X SRD 00515X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of 25 °C, un |
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Mitel Networks |
Datacom / Telecom / General Purpose PIN Photodiodes |
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Siemens Semiconductor Group |
Ge-Avalanche Photodiode with Pigtail bol Values 50 * − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00514X SRD 00515X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of 25 °C, un |
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