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IGT6E11 |
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| Part Number | IGT6E11 |
| Manufacturer | GE |
| Description | mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D11,E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) =0.27 il This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/... |
| Features |
• Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845(2147J 06~~lXI'--6M5AXl~~~.35819.09) MAX T~ I- a 043( 1 09) OIA ---' 0038(097) I SEATING PLANE 426/10 82, MIN CASE TEMP REFERENCE POINT 20(5001 0.162(4 09/ DIA 015(3841 2 HOLES 0440(11 IBI o 420{1067j = maximum ratings (TC 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage, RGE ... |
| Document |
 IGT6E11 Data Sheet
PDF 289.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT6E10 |
GE |
Insulated Gate Bipolar Transistor |
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| 2 | IGT6E20 |
GE |
Insulated Gate Bipolar Transistor |
|
| 3 | IGT6E21 |
GE |
Insulated Gate Bipolar Transistor |
|
| 4 | IGT60R042D1 |
Infineon |
Power Transistor |
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| 5 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |
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