IGT6D10 |
Part Number | IGT6D10 |
Manufacturer | GE |
Description | mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new typ... |
Features |
• Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 150 ns typical • Polysilicon MOS gate - Voltage controlled turn onloff • High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~---t ~'''"''~" I:0.845121.47) M A X ' H .358(9.09) MAX O.043{1.09) OIA.-I10.038(0.97) .426110.82) MIN CASE TEMP. REFERENCE POINT .20(5.00) 0.162(4.09) OIA. 0.15(3.84) 2 HOLES 0.440(11.18) 0.420(10.67) maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage. RGE = 1Mn... |
Document |
IGT6D10 Data Sheet
PDF 291.90KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT6D11 |
GE |
Insulated Gate Bipolar Transistor | |
2 | IGT6D20 |
GE |
Insulated Gate Bipolar Transistor | |
3 | IGT6D21 |
GE |
Insulated Gate Bipolar Transistor | |
4 | IGT60R042D1 |
Infineon |
Power Transistor | |
5 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |