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IGT6E20 |
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| Part Number | IGT6E20 |
| Manufacturer | GE |
| Description | mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/o... |
| Features |
• Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX · 0~~X65l~ ·35B(9.D9l MAX t~ SEATING PLANE 0.043(1.09) DIA.---.I!- 0.03810.971 --, .426110.82) MIN. CASE TEMP. REFERENCE POINT .20(5.00) 0.162(4.091 DIA. 0.15(3.841 2 HOLES 0.440(11.18) 0.420(10.671 maximum ratings (TC = 25°C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-... |
| Document |
 IGT6E20 Data Sheet
PDF 294.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT6E21 |
GE |
Insulated Gate Bipolar Transistor |
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| 2 | IGT6E10 |
GE |
Insulated Gate Bipolar Transistor |
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| 3 | IGT6E11 |
GE |
Insulated Gate Bipolar Transistor |
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| 4 | IGT60R042D1 |
Infineon |
Power Transistor |
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| 5 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |
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