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IGT4E11 |
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| Part Number | IGT4E11 |
| Manufacturer | GE |
| Description | mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on... |
| Features |
• Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 100 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.--. :~~g::~;~ .05511.391 1 .04811.221 .26516.731 .245(6.22: _ CASE + r t ~51 / 1----I----I------!tET--.35519.021 TEMPE RATURE REFERENCE / POINT . 1144511133. ·65881IDIA. .32518.251-' .22015.591 ~13. 01331 .00110.0251 TERM.1 TERM.2 ;'!1II'.n-~ .500(12.7IMIN. TEAM.3 .0331~.841 .02710.691 . 1~ h J - - . 1 0 •5.10925.162.74111 +--- .0551.39 .1 +---' ... |
| Document |
 IGT4E11 Data Sheet
PDF 298.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT4E10 |
GE |
Insulated Gate Bipolar Transistor |
|
| 2 | IGT40R070D1E8220 |
Infineon |
Power Transistor |
|
| 3 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor |
|
| 4 | IGT4D11 |
GE |
Insulated Gate Bipolar Transistor |
|
| 5 | IGT60R042D1 |
Infineon |
Power Transistor |
|