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IGT6E10 |
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| Part Number | IGT6E10 |
| Manufacturer | GE |
| Description | mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new typ... |
| Features |
• Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on - 150 ns typical • Polysilicon MOS gate - Voltage controlled turn onloff • High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~---t ~'''"''~" I:0.845121.47) M A X ' H .358(9.09) MAX O.043{1.09) OIA.-I10.038(0.97) .426110.82) MIN CASE TEMP. REFERENCE POINT .20(5.00) 0.162(4.09) OIA. 0.15(3.84) 2 HOLES 0.440(11.18) 0.420(10.67) maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage. RGE = 1Mn... |
| Document |
 IGT6E10 Data Sheet
PDF 291.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT6E11 |
GE |
Insulated Gate Bipolar Transistor |
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| 2 | IGT6E20 |
GE |
Insulated Gate Bipolar Transistor |
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| 3 | IGT6E21 |
GE |
Insulated Gate Bipolar Transistor |
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| 4 | IGT60R042D1 |
Infineon |
Power Transistor |
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| 5 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |
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