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IGT8D21 |
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| Part Number | IGT8D21 |
| Manufacturer | GE |
| Description | mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power s... |
| Features |
• Low VCE(SAT) - 2..5V typ @ 20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'28 (3.2S) .II- r - ] _ C+±J/~ .2,S (S.46) .815 (20.70) --.l.. I,~u ]f::f:~:-.j:'l:-~~'2:l;-:,3i:.""" maximum ratings (Tc = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGe = OV Collector-Gate Voltage, RGe = 1Mn. Continuous Drain Current @ TC = 90° C @TC=25°C Pulsed Collector Current<') Gate-Emitter... |
| Document |
 IGT8D21 Data Sheet
PDF 285.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT8D20 |
GE |
Insulated Gate Bipolar Transistor |
|
| 2 | IGT8E20 |
GE |
Insulated Gate Bipolar Transistor |
|
| 3 | IGT8E21 |
GE |
Insulated Gate Bipolar Transistor |
|
| 4 | IGT40R070D1E8220 |
Infineon |
Power Transistor |
|
| 5 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor |
|