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IGT4E10 |
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| Part Number | IGT4E10 |
| Manufacturer | GE |
| Description | mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn... |
| Features |
• Low VCE(SAT) - 2.5V typ @ 10A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - .I :1~g::~~II~ .05511.391 .04811.nl .265(6.731 - + - - + - - - t - .24516.221 _ CASE I- r .., TERMEFPEERRAENTUCERE - , / POINT .22015.591 ~ .00610.151 .00110.0251 TERM.l TERM.2 TERM.3 .0331~ 1I!bf.l0512.671 .027 ~~ •.09512.411 1+-" .05511.391 .1 I+- .04511.141--" .21015.331 .19014.821 ..0021511100..533811 .10712.721 .087... |
| Document |
 IGT4E10 Data Sheet
PDF 308.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT4E11 |
GE |
Insulated Gate Bipolar Transistor |
|
| 2 | IGT40R070D1E8220 |
Infineon |
Power Transistor |
|
| 3 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor |
|
| 4 | IGT4D11 |
GE |
Insulated Gate Bipolar Transistor |
|
| 5 | IGT60R042D1 |
Infineon |
Power Transistor |
|