IGT6E21 |
Part Number | IGT6E21 |
Manufacturer | GE |
Description | mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/... |
Features |
• Low VCE(SAT) - 2.5Vtyp@20A • Ultra-fast turn-on -150 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471 r 0~~lx6M5AXl:l~~'35B(9'09) MAX T --u--n= SEATING PLANE --.I- 004311091 DIA 0038(097) I 426[1082, MIN CASE TEMP REFERENCE POINT .20(5.001 EMInER 0.16214.09, DIA 0.15(3.B41 2 HOLES o 440{1 1 18) 0420(10671 maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Vo... |
Document |
IGT6E21 Data Sheet
PDF 280.29KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT6E20 |
GE |
Insulated Gate Bipolar Transistor | |
2 | IGT6E10 |
GE |
Insulated Gate Bipolar Transistor | |
3 | IGT6E11 |
GE |
Insulated Gate Bipolar Transistor | |
4 | IGT60R042D1 |
Infineon |
Power Transistor | |
5 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |