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IGT8D20 |
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| Part Number | IGT8D20 |
| Manufacturer | GE |
| Description | mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/... |
| Features |
• Low VCE(SAT) - 2.3V typ @ 20A • Ultra-fast turn-on - 200 ns typical • Polysilicon MOS gate - Voltage controlled turn on/off • High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage, RGE = 1Mn Continuous Drain Current@Tc= 100°C @Tc= 25°C Pulsed Collector Current(1) Gate-Emitter Voltage Total Power Dissipation @Tc = 25°C Derate Above 25° C Operating and Storage Junctiol} Temperature Range SYMBOL VCES VCGR I... |
| Document |
 IGT8D20 Data Sheet
PDF 290.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IGT8D21 |
GE |
Insulated Gate Bipolar Transistor |
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| 2 | IGT8E20 |
GE |
Insulated Gate Bipolar Transistor |
|
| 3 | IGT8E21 |
GE |
Insulated Gate Bipolar Transistor |
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| 4 | IGT40R070D1E8220 |
Infineon |
Power Transistor |
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| 5 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor |
|