TF2312 - Tuofeng Semiconductor

TF2312 MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.031 @ VGS = 4.5 V 0.037 @ VGS = 2.5 V 0.047 @ VGS = 1.8 V ID (A) 5.0 4.6 4.1 Qg (Typ) 7.5 (SOT-23) G1 S2 3D Top View Ordering Information: TF2312 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drai.

Features

F Typical 80 120 50 Maximum 100 166 60 Unit V A mJ A W _C Unit _C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS.