Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.040 @ VGS = 4.5 V 20 0.060 @ V GS = 2.5 V ID (A) 3.0 2.0 (SOT-23) G1 S2 3D Top View TF2302A (A2)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Volt.
itions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS =16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.0 A VDS = 5 V, ID = 3.0 A IS = 1.0 A, VGS = 0 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Inpu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
2 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
4 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
5 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
6 | TF2304 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
7 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET | |
8 | TF2306 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
9 | TF2307 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
10 | TF2308 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
11 | TF2309 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
12 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |