TF2301A - Tuofeng Semiconductor

TF2301A P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301A P-Channel TF2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.080 @ VGS = - 4.5 V - 20 0.110 @ VGS = - 2.5 V ID (A) - 2.8 - 2.0 SOT-23/-3L G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 .

Features

NLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time Symbol Test Conditions V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, .