Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2314 N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V ID (A) 4.9 4.4 3.9 (SOT-23) G1 S2 3D Top View TF2314 (AEXTF ) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Dra.
tor Technology Co., Ltd TF2314 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr Notes a. Pulse test: PW v300 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | TF2312 |
Tuofeng Semiconductor |
MOSFET | |
3 | TF2315 |
Tuofeng Semiconductor |
MOSFET | |
4 | TF2319 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
5 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
7 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
8 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
9 | TF2302A |
Tuofeng Semiconductor |
N-Channel MOSFET | |
10 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
11 | TF2304 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
12 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET |