Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2319 P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) 0.082 @ VGS = −10 V 0.130 @ VGS = −4.5 V ID (A)b −3.0 −2.4 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch (SOT-23) G1 S2 3D Top View TF2319 (C91T )* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH.
D TrenchFETr Power MOSFET
APPLICATIONS D Load Switch
(SOT-23)
G1 S2
3D
Top View TF2319 (C91T )
*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage Gate-Source Voltage
VDS −40 VGS "20
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b
TA= 25_C
ID
IDM IS
−3.0 −1.0
−2.3
−12 −0.62
Power Dissipationb Operating Junction and Storage Temperature Range
TA= 25_C
PD TJ, Tstg
1.25
0.75
−55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS Parameter
M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | TF2312 |
Tuofeng Semiconductor |
MOSFET | |
3 | TF2314 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
4 | TF2315 |
Tuofeng Semiconductor |
MOSFET | |
5 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
7 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
8 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
9 | TF2302A |
Tuofeng Semiconductor |
N-Channel MOSFET | |
10 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
11 | TF2304 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
12 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET |