TF2300 - Tuofeng Semiconductor

TF2300 N-Channel Enhancement Mode Field Effect Transistor

SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT N-Channel Enhancement Mode Field Effect Transistor TF2300 Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 .

Features

VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous
* TJ=125 -Pulsed Power Dissipation
* Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range
* Surface Mounted on FR 4 Board ,t .