TF2301 - Tuofeng Semiconductor

TF2301 P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 P-Channel TF2301MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.120 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V ID (A) - 2.8 - 1.8 (SOT-23-3L) (SOT-23) G1 S2 3D Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Ga.

Features

TF2301 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time Symbol Test Conditions V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VD.