TF2312 |
Part Number | TF2312 |
Manufacturer | Tuofeng Semiconductor |
Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2312 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.031 @ VGS = 4.5 V 0.037 @ VGS = 2.5 V 0.047 @ VGS = 1.8 V ID (A) 5.0 4.6 4.1 Qg (Typ) 7.5 (SOT-... |
Features |
F
Typical
80 120 50
Maximum
100 166 60
Unit
V
A mJ A W _C
Unit
_C/W
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2312
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea Diode Forward Voltage
Dynamicb
V(BR)DSS VGS(th) IGSS
IDSS ID(on)
rDS(on)
gfs VSD
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS... |
Document |
TF2312 Data Sheet
PDF 111.67KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | TF2314 |
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3 | TF2315 |
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MOSFET | |
4 | TF2319 |
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P-Channel MOSFET | |
5 | TF2300 |
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N-Channel Enhancement Mode Field Effect Transistor |