Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2304 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.055 @ V GS = 10 V 0.080 @ VGS = 4.5 V ID (A) 2.5 2.0 (SOT-23) G1 S2 3D Top View TF2304 (A4)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Con.
100 166 Unit V A W _C Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2304 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS VGS(th) IGSS IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Rise Ti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
3 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
4 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
5 | TF2302A |
Tuofeng Semiconductor |
N-Channel MOSFET | |
6 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
7 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET | |
8 | TF2306 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
9 | TF2307 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
10 | TF2308 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
11 | TF2309 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
12 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |