TF2305B - Tuofeng Semiconductor

TF2305B P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel 1.25-W, 1.8-V (G-S) MOSFET TF2305B PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 16 0.060 at VGS = - 4.5 V 0.080 at VGS = - 2.5 V ID (A) -3.0 -2.0 (SOT-23) G1 S2 3D Top View TF2305B FEATURES Power MOSFETs: 1.8 V Rated Pb-free Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unle.

Features

Power MOSFETs: 1.8 V Rated Pb-free Available RoHS
* COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b IDM IS Maximum Power Dissipationa, b TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 16 ± 12 -3.5 ± 12 - 1.6 1.25 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR.