TF2309 - Tuofeng Semiconductor

TF2309 P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2309 P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 0.340 at VGS = - 10 V 0.550 at VGS = - 4.5 V ID (A) - 1.25 -1 Pb-free Available RoHS* COMPLIANT (SOT-23) G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltag.

Features

/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2309 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VDS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA - 60 -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 48 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 125 °C -1 µA - 50 On-State Drain Currenta ID(on) VDS ≥ - 4.5 V, VGS = - 10 V -6 A Drain-Source On-State Resistancea rDS(on) .