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TF2309 |
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| Part Number | TF2309 |
| Manufacturer | Tuofeng Semiconductor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2309 P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 0.340 at VGS = - 10 V 0.550 at VGS = - 4.5 V ID (A) - 1.25 -1 Pb-fr... |
| Features |
/W
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2309
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage
V(BR)DSS VGS(th)
VDS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA
- 60 -1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 48 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 125 °C
-1 µA
- 50
On-State Drain Currenta
ID(on)
VDS ≥ - 4.5 V, VGS = - 10 V
-6
A
Drain-Source On-State Resistancea
rDS(on)
... |
| Document |
 TF2309 Data Sheet
PDF 138.05KB |
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