TF2307 - Tuofeng Semiconductor

TF2307 P-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2307 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.055 @ VGS = –10 V 0.075 @ VGS = –4.5 V ID (A) –4.1 –3.0 (SOT-23) G1 S2 3D Top View TF2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS –.

Features

n Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Test Conditions VGS = 0 V, ID =
  –10 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb Turn-On Time Turn-Off Time IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS =
  –24 V, VGS = 0 V VDS v
  –5 V, VGS =
  –10 V VGS =
  –.