Shen zhen TuoFeng Semiconductor Technology co., LTD TF2308 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.16 @ VGS = 10 V 0.22 @ VGS = 4.5 V ID (A) 2.0 1.7 FEATURES D 100% Rg Tested (SOT-23) G1 S2 3D Top View TF2308 (A8)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Volt.
D 100% Rg Tested
(SOT-23)
G1 S2
3D
Top View TF2308 (A8)
*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
60 "20
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 25_C
ID
IDM IS
PD TJ, Tstg
2.0 10 1.0
1.25 - 55 to 150
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc
Notes a. Surface Mounted on FR4 Board, t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
3 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
4 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
5 | TF2302A |
Tuofeng Semiconductor |
N-Channel MOSFET | |
6 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
7 | TF2304 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
8 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET | |
9 | TF2306 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
10 | TF2307 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
11 | TF2309 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
12 | TF2310 |
Tuofeng Semiconductor |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |