SSM3J36TU - Toshiba Semiconductor

SSM3J36TU Silicon P-Channel MOSFET

SSM3J36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36TU ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) 0.65±0.05 2.0±0.1 1 2 3 0.166±0.05 1: Gate 2: Source 3: Drain Unit: mm.

Features

ture/current/voltage, etc.) are within the TOSHIBA 2-2U1A absolute maximum ratings. Weight: 6.6 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Marking 3 Equivalent Circuit (top view) 3 PX 1 2 1 2 Handling Precaution Wh.