SSM3J306T - Toshiba Semiconductor

SSM3J306T Silicon P-Channel MOSFET

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • 4 V drive • Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS −30 V Gate–source voltage.

Features

bility Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain
  –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gat.