SSM3J307T - Toshiba Semiconductor

SSM3J307T Silicon P-Channel MOSFET

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Rating.

Features

perature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3S1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an.