SSM3J325F - Toshiba Semiconductor

SSM3J325F Silicon P-Channel MOSFET

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 .

Features

mperature, etc.) may cause this product to decrease in the TOSHIBA 2-3F1F reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 12 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a.