SSM3J36FS - Toshiba Semiconductor

SSM3J36FS Silicon P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS SSM3J36FS ○ Power Management Switches • 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 °C) Unit: mm Characteristics Symb.

Features

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm2 ×3) JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Marking 3 Equivalent Circuit (top view) 3 PX 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Op.