SSM3J304T - Toshiba Semiconductor

SSM3J304T Silicon P-Channel MOSFET

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Cha.

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aximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 JJ2 1 2 Equivalent Circuit (top view) 3 1 2 Start of commercial production 2006-09 1 2014-03-01 SSM3J304T Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutof.