SSM3J36MFV - Toshiba Semiconductor

SSM3J36MFV Silicon P-Channel MOSFET

SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) Unit: mm 0.22±0.05 1.2±0.05 Absolute Maximum Ratings (Ta = 25 °C) 1..

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e maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board VESM 2. 3. Drain JEDEC JEITA TOSHIBA ― ― 2-1L1B Weight: 1.5 mg (typ.) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2) Marking 3 Equivalent Circuit (top view) 3 PX 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that.