SSM3J317T - Toshiba Semiconductor

SSM3J317T Power Management Switch Applications High-Speed Switching Applications

SSM3J317T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V) 2.9±0.2 0.95 １ ２ ３ Unit: mm +0.2 2.8-0.3.

Features

he operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA ― Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling TOSHIBA 2-3S1A Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 10 mg (typ.) etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Electrical Characteristics .